Crucial Technology BLT2G3D1608DT1TX0 2GB vs G Skill Intl F4-2800C16-8GVR 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F4-2800C16-8GVR 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 18% 更低的延时

G Skill Intl F4-2800C16-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GVR 8GB

报告一个错误

更快的读取速度，GB/s

17.1 13.6

测试中的平均数值
更快的写入速度，GB/s

12.9 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-2800C16-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 28
读取速度，GB/s

13.6 17.1
写入速度，GB/s

9.4 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 3467

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMR16GX4M2A2666C16 8GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905624-036.A00G 8GB

Kingston 9905624-036.A00G 8GB