Crucial Technology BLT2G3D1608DT1TX0 2GB vs G Skill Intl F4-4000C16-8GTZR 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

G Skill Intl F4-4000C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C16-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.6

测试中的平均数值
更快的写入速度，GB/s

17.2 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4000C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

13.6 18.2
写入速度，GB/s

9.4 17.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 3885

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston K6VDX7-MIE 8GB

Kingston K6VDX7-MIE 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Samsung M3 78T6553CZ3-CE6 512MB

Samsung M3 78T6553CZ3-CE6 512MB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMR32GX4M4C3000C16 8GB

Corsair CMR32GX4M4C3000C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB