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Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs G Skill Intl F4-4000C18-8GTZKW 8GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 12% 更低的延时
G Skill Intl F4-4000C18-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZKW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.4 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 26
  • 读取速度，GB/s
    13.6 left arrow 19.4
  • 写入速度，GB/s
    9.4 left arrow 16.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3899

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD64GX4M4A2666C15 16GB
Corsair CMD64GX4M4A2666C15 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Avant Technology J641GU42J9266ND 8GB
Avant Technology J641GU42J9266ND 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMK16GX4M4B3200C16 4GB
内存RAM