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Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9965643-002.A01G 4GB
比较
Crucial Technology BLT2G3D1608DT1TX0 2GB vs Kingston 9965643-002.A01G 4GB
总分
Crucial Technology BLT2G3D1608DT1TX0 2GB
总分
Kingston 9965643-002.A01G 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
需要考虑的原因
Kingston 9965643-002.A01G 4GB
报告一个错误
更快的读取速度,GB/s
16.2
13.6
测试中的平均数值
更快的写入速度,GB/s
12.1
9.4
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9965643-002.A01G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
23
读取速度,GB/s
13.6
16.2
写入速度,GB/s
9.4
12.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2096
2546
Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较
Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Kingston 9965643-002.A01G 4GB RAM的比较
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PNY Electronics PNY 2GB
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Micron Technology 16ATF1G64AZ-2G1A1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 99U5723-002.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston XW21KG-MIE-NX 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston HX421C14FB/4 4GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CM4X16GE2933C19S2 16MB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905678-065.A00G 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
Corsair CMT32GX4M2E3200C16 16GB
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