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Crucial Technology BLT2G3D1608DT1TX0 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 52
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 7.7
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G3B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 52
  • 读取速度，GB/s
    13.6 left arrow 10.0
  • 写入速度，GB/s
    9.4 left arrow 7.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 2260

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Essencore Limited KD4AGU880-32A160T 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F4-3466C16-4GVK 4GB
内存RAM