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Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 36
    左右 36% 更低的延时
Patriot Memory (PDP Systems) 3000 C18 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 36
  • 读取速度，GB/s
    13.6 left arrow 15.5
  • 写入速度，GB/s
    9.4 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3050

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM