Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.5

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G6B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

4,577.1 18.2
写入速度，GB/s

2,066.5 13.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

737 3201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology CT4G4DFS8266.C8FB 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M393B5170FH0-CK0 4GB

Corsair CMY16GX3M2A1866C 8GB

Corsair CMY16GX3M2A1866C 8GB