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Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs SK Hynix HMAA4GS6MJR8N-VK 32GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 36
    左右 36% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 8.9
    测试中的平均数值
SK Hynix HMAA4GS6MJR8N-VK 32GB 需要考虑的原因
SK Hynix HMAA4GS6MJR8N-VK 32GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 13.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 36
  • 读取速度，GB/s
    13.6 left arrow 14.7
  • 写入速度，GB/s
    9.4 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 2588

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

SK Hynix HMAA4GS6MJR8N-VK 32GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Samsung M378B5173QH0-CK0 4GB
Samsung M378B5173QH0-CK0 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM