Crucial Technology BLT2G3D1608DT1TX0 2GB vs V-Color Technology Inc. TA48G36S818BNK 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 24

左右 4% 更低的延时

V-Color Technology Inc. TA48G36S818BNK 8GB

需要考虑的原因
V-Color Technology Inc. TA48G36S818BNK 8GB

报告一个错误

更快的读取速度，GB/s

19 13.6

测试中的平均数值
更快的写入速度，GB/s

17.6 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

V-Color Technology Inc. TA48G36S818BNK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 24
读取速度，GB/s

13.6 19.0
写入速度，GB/s

9.4 17.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 3907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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V-Color Technology Inc. TA48G36S818BNK 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramaxel Technology RMSA3260MB78HAF2400 8GB

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Kingston KP4T2F-PSB 4GB

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V-Color Technology Inc. TL48G32S8RRGB16 8GB

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Samsung M393B1K70DH0-CH9 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB