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Crucial Technology BLT4G3D1337DT1TX0. 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

总分
star star star star star
Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

差异 规格 评论

差异

Crucial Technology BLT4G3D1337DT1TX0. 4GB 需要考虑的原因
Crucial Technology BLT4G3D1337DT1TX0. 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    14.2 left arrow 15.6
  • 写入速度，GB/s
    8.4 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2309 left arrow 2808

Crucial Technology BLT4G3D1337DT1TX0. 4GB RAM的比较

Kingston HX316C10F/8 8GB
Kingston 9905711-002.A00G 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology 78.CAGP7.4020B 8GB
Apacer Technology 78.CAGP7.4020B 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM4X16GE2666C16K4 16GB
Corsair CM4X16GE2666C16K4 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Kingston KF3000C15D4/8GX 8GB
Kingston KF3000C15D4/8GX 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Samsung M471A1K43BB1-CTD 8GB
Samsung M471A1K43BB1-CTD 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMW64GX4M4K3600C18 16GB
Corsair CMW64GX4M4K3600C18 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
内存RAM