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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GE2666C18S4 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CM4X16GE2666C18S4 16GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.4
    测试中的平均数值
Corsair CM4X16GE2666C18S4 16GB 需要考虑的原因
Corsair CM4X16GE2666C18S4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 63
    左右 -97% 更低的延时
  • 更快的写入速度，GB/s
    13.2 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GE2666C18S4 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 32
  • 读取速度，GB/s
    3,231.0 left arrow 16.4
  • 写入速度，GB/s
    1,447.3 left arrow 13.2
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    478 left arrow 3226

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Corsair CM4X16GE2666C18S4 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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Kingston KHX2666C16S4/32G 32GB
内存RAM
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