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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTZR 16GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-4000C19-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 26
  • 读取速度，GB/s
    9.2 left arrow 18.8
  • 写入速度，GB/s
    8.1 left arrow 17.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 4053

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-4000C19-16GTZR 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-2133C15-8GRK 8GB
G Skill Intl F4-2133C15-8GRK 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM