Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-4000C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的读取速度，GB/s

18.8 9.2

测试中的平均数值
更快的写入速度，GB/s

17.9 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 26
读取速度，GB/s

9.2 18.8
写入速度，GB/s

8.1 17.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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Corsair CMK16GX4M4B3733C17 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB