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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 9JSF51272AZ-1G9P1 4GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 9JSF51272AZ-1G9P1 4GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 7.4
    测试中的平均数值
Micron Technology 9JSF51272AZ-1G9P1 4GB 需要考虑的原因
Micron Technology 9JSF51272AZ-1G9P1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 54
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    12.5 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    14900 left arrow 12800
    左右 1.16 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    54 left arrow 27
  • 读取速度，GB/s
    9.2 left arrow 12.5
  • 写入速度，GB/s
    8.1 left arrow 7.4
  • 内存带宽，mbps
    12800 left arrow 14900
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-10-9-28 / 1866 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2311

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB

Micron Technology 9JSF51272AZ-1G9P1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
AMD R744G2400U1S 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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