Samsung M393B2G70BH0-CK0 16GB vs Nanya Technology M2F2G64CB88D7N-CG 2GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Nanya Technology M2F2G64CB88D7N-CG 2GB

Nanya Technology M2F2G64CB88D7N-CG 2GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

更快的写入速度，GB/s

8.1 7.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Nanya Technology M2F2G64CB88D7N-CG 2GB

需要考虑的原因
Nanya Technology M2F2G64CB88D7N-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 -108% 更低的延时
更快的读取速度，GB/s

9.4 9.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Nanya Technology M2F2G64CB88D7N-CG 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

54 26
读取速度，GB/s

9.2 9.4
写入速度，GB/s

8.1 7.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2105 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

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Nanya Technology M2F2G64CB88D7N-CG 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Crucial Technology BLS8G4S26BFSD.16FD2 8GB

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Kingston 99U5471-020.A00LF 4GB

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G Skill Intl F4-3800C14-8GTZN 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 9965596-036.B00G 8GB