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Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CB8GS2666.C8ET 8GB vs Crucial Technology CT16G4SFD824A.C16FBD 16GB

总分
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

总分
star star star star star
Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

差异 规格 评论

差异

Crucial Technology CB8GS2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Crucial Technology CT16G4SFD824A.C16FBD 16GB 需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 39
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 9.1
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 38
  • 读取速度，GB/s
    14.0 left arrow 14.5
  • 写入速度，GB/s
    9.1 left arrow 10.0
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2221 left arrow 2509

Crucial Technology CB8GS2666.C8ET 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-2400C15-16GFXR 16GB
G Skill Intl F4-2400C15-16GFXR 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
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A-DATA Technology DDR3 1600 4GB
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内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
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