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Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
比较
Crucial Technology CB8GS2666.C8ET 8GB vs Crucial Technology CT8G4SFS824A.C8FAD1 8GB
总分
Crucial Technology CB8GS2666.C8ET 8GB
总分
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
39
左右 -50% 更低的延时
更快的读取速度,GB/s
14.8
14
测试中的平均数值
更快的写入速度,GB/s
9.6
9.1
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
39
26
读取速度,GB/s
14.0
14.8
写入速度,GB/s
9.1
9.6
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2221
2437
Crucial Technology CB8GS2666.C8ET 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB RAM的比较
Corsair CM5S16GM4800A40K2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston ACR256X64D3S1333C9 2GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9905643-009.A00G 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
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Samsung M393B1G70BH0-CK0 8GB
Kingston 9905711-032.A00G 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMK32GX4M4A2133C15 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFD8213.C16FADP 8GB
报告一个错误
×
Bug description
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