Crucial Technology CT102464BA160B.M16 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Crucial Technology CT102464BA160B.M16 8GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

22.8 12.6

测试中的平均数值
更快的写入速度，GB/s

16.9 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.6 22.8
写入速度，GB/s

7.8 16.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2209 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3000C15-8GRRB 8GB

G Skill Intl F4-3000C15-8GRRB 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB

Nanya Technology M2F8G64CB8HB5N-DI 8GB

Nanya Technology M2F8G64CB8HB5N-DI 8GB

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston K821PJ-MIH 16GB

Kingston K821PJ-MIH 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB