Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异

  • 低于PassMark测试中的延时,ns
    25 left arrow 29
    左右 14% 更低的延时
  • 更快的读取速度,GB/s
    22.8 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度,GB/s
    16.9 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    25 left arrow 29
  • 读取速度,GB/s
    12.1 left arrow 22.8
  • 写入速度,GB/s
    8.6 left arrow 16.9
  • 内存带宽,mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3792
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较