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Crucial Technology CT102464BA160B.M16 8GB
Corsair CMD64GX4M4A2666C15 16GB
比较
Crucial Technology CT102464BA160B.M16 8GB vs Corsair CMD64GX4M4A2666C15 16GB
总分
Crucial Technology CT102464BA160B.M16 8GB
总分
Corsair CMD64GX4M4A2666C15 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB
报告一个错误
低于PassMark测试中的延时,ns
40
41
左右 2% 更低的延时
需要考虑的原因
Corsair CMD64GX4M4A2666C15 16GB
报告一个错误
更快的读取速度,GB/s
14
12.6
测试中的平均数值
更快的写入速度,GB/s
13.9
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMD64GX4M4A2666C15 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
41
读取速度,GB/s
12.6
14.0
写入速度,GB/s
7.8
13.9
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2209
3100
Crucial Technology CT102464BA160B.M16 8GB RAM的比较
Corsair CMZ16GX3M2A1600C9 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Corsair CMD64GX4M4A2666C15 16GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung 1600 CL10 Series 8GB
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Samsung M3 78T2863QZS-CF7 1GB
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Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Kingston KHX16LC9/8GX 8GB
Corsair CMD32GX4M2C3200C14M 16GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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报告一个错误
×
Bug description
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