Crucial Technology CT102464BA160B.M16 8GB vs Crucial Technology CT8G4SFD824A.C16FDD2 8GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 -48% 更低的延时
更快的读取速度，GB/s

14.8 12.6

测试中的平均数值
更快的写入速度，GB/s

11.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 27
读取速度，GB/s

12.6 14.8
写入速度，GB/s

7.8 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2209 2426

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

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Kingston 2GB-DDR2 800Mhz 2GB

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Samsung M378A2G43BB3-CWE 16GB

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Crucial Technology BL8G32C16U4R.8FE 8GB