Samsung M378A2G43BB3-CWE 16GB vs Crucial Technology BL8G32C16U4R.8FE 8GB

总分

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

总分

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

差异规格评论

差异

Samsung M378A2G43BB3-CWE 16GB

需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Crucial Technology BL8G32C16U4R.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4R.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 -46% 更低的延时
更快的读取速度，GB/s

19.1 17.9

测试中的平均数值
更快的写入速度，GB/s

15.6 10.4

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A2G43BB3-CWE 16GB

Crucial Technology BL8G32C16U4R.8FE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 26
读取速度，GB/s

17.9 19.1
写入速度，GB/s

10.4 15.6
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3030 3609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Protocol Engines Kingrock 800 2GB 2GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Kingston 9905471-076.A00LF 8GB

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Corsair CMW16GX4M2Z4000C18 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F4-2133C15-8GIS 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB