Crucial Technology CT102464BA160B.M16 8GB vs G Skill Intl F4-3000C14-16GVK 16GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

G Skill Intl F4-3000C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

13.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-3000C14-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

12.6 17.0
写入速度，GB/s

7.8 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2209 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Super Talent F24SB8GH 8GB

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Samsung M471B5173QH0-YK0 4GB

Corsair CMWS8GL3200K16W4E 8GB

Corsair CMWS8GL3200K16W4E 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

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Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB