Crucial Technology CT102464BA160B.M16 8GB vs Samsung M378B5273CH0-CK0 4GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 41

左右 2% 更低的延时

Samsung M378B5273CH0-CK0 4GB

需要考虑的原因
Samsung M378B5273CH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

13.1 12.6

测试中的平均数值
更快的写入速度，GB/s

8.7 7.8

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

Samsung M378B5273CH0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 41
读取速度，GB/s

12.6 13.1
写入速度，GB/s

7.8 8.7
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2209 2094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Apacer Technology GD2.1831WS.001 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB