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Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB

Crucial Technology CT102464BA160B.M16 8GB vs SK Hynix HMA81GU6AFR8N-UH 8GB

总分
star star star star star
Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分
star star star star star
SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

差异 规格 评论

差异

Crucial Technology CT102464BA160B.M16 8GB 需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB
报告一个错误
SK Hynix HMA81GU6AFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GU6AFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 40
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 34
  • 读取速度，GB/s
    12.6 left arrow 15.1
  • 写入速度，GB/s
    7.8 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2209 left arrow 2620

Crucial Technology CT102464BA160B.M16 8GB RAM的比较

Corsair CMZ16GX3M2A1600C9 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK16GX4M2K4133C19 8GB
Corsair CMK16GX4M2K4133C19 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Corsair CMK16GX4M1A2400C14 16GB
Corsair CMK16GX4M1A2400C14 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hewlett-Packard 7EH55AA# 8GB
Hewlett-Packard 7EH55AA# 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M2C3200C18 16GB
Corsair CMK32GX4M2C3200C18 16GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905701-004.A00G 16GB
Kingston 9905701-004.A00G 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM