G Skill Intl F3-12800CL7-4GBXM 4GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 36

左右 -157% 更低的延时
更快的读取速度，GB/s

26.4 14.8

测试中的平均数值
更快的写入速度，GB/s

19.8 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 14
读取速度，GB/s

14.8 26.4
写入速度，GB/s

8.7 19.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2481 4362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston X5H5PW-MIE 8GB

Kingston X5H5PW-MIE 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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Essencore Limited IM48GU48N21-FFFHM 8GB

Essencore Limited IM48GU48N21-FFFHM 8GB