Crucial Technology CT102464BD160B.M16 8GB vs G Skill Intl F4-3733C17-16GTZSW 16GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

G Skill Intl F4-3733C17-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3733C17-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

16.9 14.2

测试中的平均数值
更快的写入速度，GB/s

12.8 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

G Skill Intl F4-3733C17-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

14.2 16.9
写入速度，GB/s

8.9 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2412 3158

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-2666C19-16GRS 16GB

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AMD R534G1601U1S-UO 4GB

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Kingston ACR24D4S7S1MB-4 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 72ASS4G72LZ-2G3A2 32GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Corsair CMK32GX4M4K4133C19 8GB

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Kingston KF552C40-16 16GB

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Corsair CMK64GX4M2C3200C16 32GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston 9905678-029.A00G 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Corsair CMW64GX4M2D3600C18 32GB

Corsair CMW64GX4M2D3600C18 32GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB