Crucial Technology CT102464BD160B.M16 8GB vs Lexar Co Limited LD4AU016G-H2666G 16GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

Lexar Co Limited LD4AU016G-H2666G 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H2666G 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

16.9 14.2

测试中的平均数值
更快的写入速度，GB/s

11.1 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

Lexar Co Limited LD4AU016G-H2666G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.2 16.9
写入速度，GB/s

8.9 11.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2412 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston 9905598-006.A00G 8GB

Kingston 9905598-006.A00G 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905744-011.A00G 32GB

Kingston 9905744-011.A00G 32GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

Crucial Technology BLS16G4D26BFSE.16FD 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB