Crucial Technology CT102464BD160B.M16 8GB vs SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 85

左右 52% 更低的延时
更快的写入速度，GB/s

8.9 8.1

测试中的平均数值

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

需要考虑的原因
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

报告一个错误

更快的读取速度，GB/s

15.1 14.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 85
读取速度，GB/s

14.2 15.1
写入速度，GB/s

8.9 8.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2412 1772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Essencore Limited KD44GU480-26N160T 4GB

Essencore Limited KD44GU480-26N160T 4GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston KHX2133C13D4/8GX 8GB

Kingston KHX2133C13D4/8GX 8GB