Crucial Technology CT102464BD160B.M16 8GB vs SK Hynix HMA425S6BJR6N-UH 2GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 101

左右 59% 更低的延时
更快的写入速度，GB/s

8.9 7.0

测试中的平均数值

SK Hynix HMA425S6BJR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

SK Hynix HMA425S6BJR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 101
读取速度，GB/s

14.2 14.2
写入速度，GB/s

8.9 7.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2412 1313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Hyundai Inc AR32C16S8K2SU416R 8GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CM4X4GD3000C15K4 4GB

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Corsair CM2X2048-6400C5DHX 2GB

Apacer Technology D12.2324WT.001 8GB

Apacer Technology D12.2324WT.001 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

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Samsung M471A5244CB0-CWE 4GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Kingston HP37D4U1S8ME-8X 8GB

Kingston HP37D4U1S8ME-8X 8GB