Crucial Technology CT102464BF160B-16F 8GB vs A-DATA Technology DDR4 2800 8GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

A-DATA Technology DDR4 2800 8GB

需要考虑的原因
A-DATA Technology DDR4 2800 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 29

左右 -38% 更低的延时
更快的读取速度，GB/s

19.1 12.8

测试中的平均数值
更快的写入速度，GB/s

15.1 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

A-DATA Technology DDR4 2800 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 21
读取速度，GB/s

12.8 19.1
写入速度，GB/s

9.4 15.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2282 3350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston 99U5712-009.A00G 16GB

Kingston 99U5712-009.A00G 16GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Corsair CMW32GX4M4A2666C16 8GB

Corsair CMW32GX4M4A2666C16 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB