Samsung M378B5673EH1-CF8 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

报告一个错误

更快的读取速度，GB/s

18.5 12.7

测试中的平均数值
更快的写入速度，GB/s

15.7 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.7 18.5
写入速度，GB/s

7.5 15.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3333C16-8GTZSW 8GB

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Samsung M471B5173QH0-YK0 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Gloway International (HK) STK4U2400D17161C 16GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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V-Color Technology Inc. TD416G26D819-VC 16GB

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Avant Technology W642GU42J5213N2 16GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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