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Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2133C15-4GVR 4GB

Crucial Technology CT102464BF160B-16F 8GB vs G Skill Intl F4-2133C15-4GVR 4GB

总分
star star star star star
Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分
star star star star star
G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B-16F 8GB 需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 12% 更低的延时
G Skill Intl F4-2133C15-4GVR 4GB 需要考虑的原因
G Skill Intl F4-2133C15-4GVR 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2133C15-4GVR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 33
  • 读取速度，GB/s
    12.8 left arrow 15.0
  • 写入速度，GB/s
    9.4 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2282 left arrow 2478

Crucial Technology CT102464BF160B-16F 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Kingston 9905428-123.A00LF 8GB

G Skill Intl F4-2133C15-4GVR 4GB RAM的比较

SK Hynix HMA851S6CJR6N-XN 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Kingston 9965639-002.A01G 8GB
Kingston 9965639-002.A01G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C16-16GSXFB 16GB
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内存RAM
Samsung M393B5170FH0-CH9 4GB
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Kingston 9905598-028.A00G 8GB
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内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
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Corsair CMR64GX4M4C3333C16 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston 9965589-031.D01G 2GB
Kingston 9965589-031.D01G 2GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
内存RAM