Crucial Technology CT102464BF160B-16F 8GB vs G Skill Intl F4-4000C16-8GTZRA 8GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

G Skill Intl F4-4000C16-8GTZRA 8GB

需要考虑的原因
G Skill Intl F4-4000C16-8GTZRA 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 29

左右 -38% 更低的延时
更快的读取速度，GB/s

22.4 12.8

测试中的平均数值
更快的写入速度，GB/s

19.1 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 21
读取速度，GB/s

12.8 22.4
写入速度，GB/s

9.4 19.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2282 4251

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Corsair CMR64GX4M4C3466C16 16GB

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Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2400C17-4GFT 4GB

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Kingmax Semiconductor GSLG42F-18---------- 8GB

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Kingston 99P5471-002.A00LF 2GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB