TwinMOS 8DPT5MK8-TATP 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 66

左右 20% 更低的延时
更快的读取速度，GB/s

3 14.7

测试中的平均数值

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

报告一个错误

更快的写入速度，GB/s

7.3 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 66
读取速度，GB/s

3,726.4 14.7
写入速度，GB/s

1,590.1 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 1699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2K43CB1-CTD 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Corsair CM4X8GF2400C16S4 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

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Kingston ACR32D4U2S8HD-8X 8GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

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Crucial Technology CT16G4SFD832A.M16FJ 16GB

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