Crucial Technology CT102464BF160B-16F 8GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 34

左右 15% 更低的延时

Micron Technology 4ATF51264AZ-3G2J1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-3G2J1 4GB

报告一个错误

更快的读取速度，GB/s

17.3 12.8

测试中的平均数值
更快的写入速度，GB/s

12.0 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 34
读取速度，GB/s

12.8 17.3
写入速度，GB/s

9.4 12.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2282 2665

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Apacer Technology GD2.111881.002 4GB

Apacer Technology GD2.111881.002 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston K6VDX7-MIE 8GB

Kingston K6VDX7-MIE 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB