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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston K6VDX7-MIE 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston K6VDX7-MIE 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Kingston K6VDX7-MIE 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.3
测试中的平均数值
需要考虑的原因
Kingston K6VDX7-MIE 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
71
左右 -97% 更低的延时
更快的写入速度,GB/s
8.1
1,322.6
测试中的平均数值
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston K6VDX7-MIE 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
36
读取速度,GB/s
2,831.6
14.3
写入速度,GB/s
1,322.6
8.1
内存带宽,mbps
5300
25600
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
399
2332
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Kingston K6VDX7-MIE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CM4X16GE2933C19S2 16MB
Samsung M393B2G70BH0-CH9 16GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M391B5673EH1-CH9 2GB
V-GEN D4S8GL30A8TS5 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Kingston HX318C10FK/4 4GB
Kingston 9905598-026.A00G 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Kingston 99U5403-465.A00LF 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Peak Electronics 256X64M-67E 2GB
Kingston 9905744-027.A00G 16GB
Avant Technology F6451U64F9333G 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
报告一个错误
×
Bug description
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