Nanya Technology NT512T64U88B0BY-3C 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

报告一个错误

低于PassMark测试中的延时，ns

66 71

左右 -8% 更低的延时
更快的读取速度，GB/s

4 2

测试中的平均数值
更快的写入速度，GB/s

2,935.8 1,322.6

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

71 66
读取速度，GB/s

2,831.6 4,360.5
写入速度，GB/s

1,322.6 2,935.8
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

399 728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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