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Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-3200C16-16GTZSK 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
G Skill Intl F4-3200C16-16GTZSK 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
15.9
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
71
左右 -103% 更低的延时
更快的写入速度,GB/s
11.7
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
35
读取速度,GB/s
2,831.6
15.9
写入速度,GB/s
1,322.6
11.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
3147
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston KHX4800C19D4/8GX 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Kingston 99U5584-001.A00LF 4GB
Avant Technology J641GU42J9266NL 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AX4S2800316G18-B 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Golden Empire CL5-5-5DDR2 1GB
A-DATA Technology DDR3 1333G 2GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Kingston ACR16D3LS1KNG/4G 4GB
Samsung M471A2K43CB1-CRCR 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston HX426C16FB2/8-SP 8GB
Samsung M471B5173QH0-YK0 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
报告一个错误
×
Bug description
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