Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-3200C16-16GTZSK 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 15.9

测试中的平均数值

G Skill Intl F4-3200C16-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 71

左右 -103% 更低的延时
更快的写入速度，GB/s

11.7 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3200C16-16GTZSK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 35
读取速度，GB/s

2,831.6 15.9
写入速度，GB/s

1,322.6 11.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston SMD4-S8G48HJ-26V 8GB

Kingston SMD4-S8G48HJ-26V 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9905625-096.A00G 16GB

Kingston 9905625-096.A00G 16GB