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Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMU32GX4M2A2666C16 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMU32GX4M2A2666C16 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Corsair CMU32GX4M2A2666C16 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
17.3
测试中的平均数值
需要考虑的原因
Corsair CMU32GX4M2A2666C16 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
71
左右 -145% 更低的延时
更快的写入速度,GB/s
13.5
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMU32GX4M2A2666C16 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
29
读取速度,GB/s
2,831.6
17.3
写入速度,GB/s
1,322.6
13.5
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
3397
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Corsair CMU32GX4M2A2666C16 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMU32GX4M2A2666C16 16GB
Kingston 9905403-156.A00LF 2GB
Samsung M393A1G40EB1-CPB 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3400C16-16GVK 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair MK16GX44B3000C15 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Kingston 99U5403-050.A00LF 4GB
G Skill Intl F4-3600C14-16GTZN 16GB
Samsung M471B5673FH0-CF8 2GB
Samsung M386A4K40BB0-CRC 32GB
Kingston 9905471-002.A00LF 2GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905713-017.A00G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Golden Empire CL19-19-19 D4-2666 4GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
×
Bug description
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