Samsung M391B5673EH1-CH9 2GB vs V-GEN D4S8GL30A8TS5 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 58

左右 55% 更低的延时
更快的写入速度，GB/s

9.0 8.9

测试中的平均数值

V-GEN D4S8GL30A8TS5 8GB

需要考虑的原因
V-GEN D4S8GL30A8TS5 8GB

报告一个错误

更快的读取速度，GB/s

18.3 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

V-GEN D4S8GL30A8TS5 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 58
读取速度，GB/s

12.8 18.3
写入速度，GB/s

9.0 8.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair CMD8GX4M2B3866C18 4GB