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Crucial Technology CT102464BF160B-16F 8GB
Micron Technology AFLD48EH1P 8GB
比较
Crucial Technology CT102464BF160B-16F 8GB vs Micron Technology AFLD48EH1P 8GB
总分
Crucial Technology CT102464BF160B-16F 8GB
总分
Micron Technology AFLD48EH1P 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
43
左右 33% 更低的延时
需要考虑的原因
Micron Technology AFLD48EH1P 8GB
报告一个错误
更快的读取速度,GB/s
16.1
12.8
测试中的平均数值
更快的写入速度,GB/s
10.7
9.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology AFLD48EH1P 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
43
读取速度,GB/s
12.8
16.1
写入速度,GB/s
9.4
10.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2282
2928
Crucial Technology CT102464BF160B-16F 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Kingston 9905428-123.A00LF 8GB
Micron Technology AFLD48EH1P 8GB RAM的比较
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology AFLD48EH1P 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL8G24C16U4B.8FB 8GB
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Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO8GX3M1C1600C11 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Apacer Technology GD2.1527WT.001 8GB
Kingston 9905403-444.A00LF 4GB
Mushkin 99[2/7/4]198F 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-4000C18-8GTRS 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Samsung M4 70T2953EZ3-CE6 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
报告一个错误
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