Crucial Technology CT102464BF160B-16F 8GB vs SK Hynix HMA851U6DJR6N-WM 4GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时

SK Hynix HMA851U6DJR6N-WM 4GB

需要考虑的原因
SK Hynix HMA851U6DJR6N-WM 4GB

报告一个错误

更快的读取速度，GB/s

16.3 12.8

测试中的平均数值
更快的写入速度，GB/s

12.2 9.4

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

SK Hynix HMA851U6DJR6N-WM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

12.8 16.3
写入速度，GB/s

9.4 12.2
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2282 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C16-8GRSB 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Crucial Technology CT8G4DFS8266.C8FD1 8GB

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Samsung M378B5173EB0-CK0 4GB

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SK Hynix HMAA4GU6AJR8N-XN 32GB

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Kingston 9965525-140.A00LF 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3200C15-16GTZKW 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

V-Color Technology Inc. TA48G32S816SK 8GB

V-Color Technology Inc. TA48G32S816SK 8GB

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Samsung M471B5173EB0-YK0 4GB

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Corsair CMT16GX4M2Z3200C16 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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