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Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CT102464BF160B.C16 8GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
Crucial Technology CB8GS2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 44
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CB8GS2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 39
  • 读取速度，GB/s
    12.6 left arrow 14.0
  • 写入速度，GB/s
    8.6 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 2221

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

Crucial Technology CB8GS2666.C8ET 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Apacer Technology D12.2324CS.001 8GB
Apacer Technology D12.2324CS.001 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Transcend Information AQD-SD4U16GN21-SE 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M386A4K40BB0-CRC 32GB
Samsung M386A4K40BB0-CRC 32GB
内存RAM