Crucial Technology CT102464BF160B.C16 8GB vs Crucial Technology CT8G4DFRA266.C8FP 8GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FP 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 -47% 更低的延时
更快的读取速度，GB/s

16 12.6

测试中的平均数值
更快的写入速度，GB/s

14.3 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 30
读取速度，GB/s

12.6 16.0
写入速度，GB/s

8.6 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2193 3312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD8GX4M2B3000C15 4GB

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Kingston 99U5403-036.A00G 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB