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Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Kingston KVR16N11/8-SP 8GB vs Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB 需要考虑的原因
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    13.9 left arrow 15.3
  • 写入速度，GB/s
    9.5 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2291

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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内存RAM
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Kingston 9965596-031.B00G 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
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Kingston KHX2133C11D3/4GX 4GB
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Micron Technology 8ATF1G64HZ-2G3B1 8GB
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Kingston 9965589-017.D00G 8GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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Corsair CMK16GX4M2B3200C14 8GB
内存RAM
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Kingston 9905471-076.A00LF 8GB
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内存RAM
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内存RAM
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Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM