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Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2400C17-8GSXW 8GB

Crucial Technology CT102464BF160B.C16 8GB vs G Skill Intl F4-2400C17-8GSXW 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
G Skill Intl F4-2400C17-8GSXW 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GSXW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 44
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 22
  • 读取速度，GB/s
    12.6 left arrow 17.8
  • 写入速度，GB/s
    8.6 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 3115

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

G Skill Intl F4-2400C17-8GSXW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 99U5595-005.A00LF 2GB
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内存RAM
Kingston 9905471-002.A00LF 2GB
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A-DATA Technology DDR3 1333G 2GB
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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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G Skill Intl F4-3200C16-16GSXWB 16GB
内存RAM
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Kingston 9905700-024.A00G 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM
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Kingston 9905624-008.A00G 8GB
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Samsung M471A1G43DB0-CPB 8GB
内存RAM
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Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM