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A-DATA Technology DQKD1A08 1GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB

A-DATA Technology DQKD1A08 1GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 10
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G3B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB
报告一个错误
  • 更快的写入速度，GB/s
    7.7 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 52
  • 读取速度，GB/s
    2,614.5 left arrow 10.0
  • 写入速度，GB/s
    1,145.9 left arrow 7.7
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    409 left arrow 2260

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
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内存RAM
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Crucial Technology CT102464BF160B.C16 8GB
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内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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