Crucial Technology CT102464BF160B.C16 8GB vs Golden Empire CL16-20-20 D4-3200 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

Golden Empire CL16-20-20 D4-3200 16GB

需要考虑的原因
Golden Empire CL16-20-20 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 -33% 更低的延时
更快的读取速度，GB/s

16.9 12.6

测试中的平均数值
更快的写入速度，GB/s

11.0 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Golden Empire CL16-20-20 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 33
读取速度，GB/s

12.6 16.9
写入速度，GB/s

8.6 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2193 3041

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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PNY Electronics PNY 2GB

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Kingston 99U5471-020.A00LF 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378B5673FH0-CH9 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB