Crucial Technology CT102464BF160B.C16 8GB vs ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

需要考虑的原因
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 44

左右 -83% 更低的延时
更快的读取速度，GB/s

15.4 12.6

测试中的平均数值
更快的写入速度，GB/s

10.5 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 24
读取速度，GB/s

12.6 15.4
写入速度，GB/s

8.6 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2193 2440

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMK16GX4M2L3000C15 8GB

Corsair CMK16GX4M2L3000C15 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 9905702-017.A00G 8GB

Kingston 9905702-017.A00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

UMAX Technology 16GB

UMAX Technology 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB