Crucial Technology CT16G4SFD832A.M16FJ 16GB vs G Skill Intl F4-3200C18-8GRS 8GB

总分

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

总分

G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

差异规格评论

差异

Crucial Technology CT16G4SFD832A.M16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.M16FJ 16GB

报告一个错误

更快的写入速度，GB/s

15.3 13.4

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

G Skill Intl F4-3200C18-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C18-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 -7% 更低的延时
更快的读取速度，GB/s

17.2 17.1

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology CT16G4SFD832A.M16FJ 16GB

G Skill Intl F4-3200C18-8GRS 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

31 29
读取速度，GB/s

17.1 17.2
写入速度，GB/s

15.3 13.4
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3520 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD32GX4M4A2400C12 8GB

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Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

G Skill Intl F4-3200C18-8GRS 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Corsair CMK8GX4M2B3866C18 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Apacer Technology 78.BAGM6.40C0B 4GB

Apacer Technology 78.BAGM6.40C0B 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT8G4SFD824A.C16FHP 8GB

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Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905665-014.A00G 4GB

Kingston 9905665-014.A00G 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston 9965589-006.E00G 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Kingston K821PJ-MIH 16GB

Kingston K821PJ-MIH 16GB